Damage depth profiles of shallow-implanted or compositional-graded surfaces for X-ray and γ-ray detectors

A new algorithm for spectroscopic ellipsometry data interpretation for inhomogeneous surfaces and interfaces is applied to concrete semiconductor structures with practical applications as X-ray and γ-ray detector materials. We demonstrate the damage depth profiling of shallow-implanted Si, the unknown thickness and the compositional depth profile of the AlGeAsGaAs heterojunction as well as the silicide kinetics formation after rapid thermal treatments in very thin surface layers (below 80 nm). The algorithm works without any particular assumptions about the profile function in the inhomogeneous media. We show the interdiffusion in the metallurgical interface of the CdTeHgTe structures.