The noise reduction of silicon detectors by wafer analyses and technological procedures

The technological preparation of a front side of a surface-barrier silicon detector (SBSD) was analyzed in two different ways. At a laboratory temperature, the developed procedures made it possible to decrease the FWHM-values of monolithic circular SBSDs with detection areas within a range of 20–200 mm2 and a minimum depleted layer of 900–1400 μm to less than 75% of the values obtained without application of the diagnostic results described.