Author/Authors :
Manfredi، نويسنده , , P.F and Re، نويسنده , , V and Speziali، نويسنده , , V، نويسنده ,
Abstract :
A monolithic process has been developed to integrate epitaxial junction field-effect transistors on the same substrate. The process was proven to feature outstanding noise performances on a very broad frequency range. After the first applications to calorimetry front-end in particle physics, the process was oriented to preamplifiers for room temperature radiation spectrometry. This paper describes a new series of low noise monolithic circuits suitable for applications with detector capacitances in the 10–50 pF range.