Author/Authors :
Nail، نويسنده , , M and Gibert، نويسنده , , P and Miquel، نويسنده , , J.L and Cuzin، نويسنده , , D. and Gentet، نويسنده , , M.C and Gerbe، نويسنده , , E. I. Kats and J. Lajzerowicz ، نويسنده , , J and Rouviere، نويسنده , , P and Armengaud، نويسنده , , L and Lalande، نويسنده , , M and Jecko، نويسنده , , B، نويسنده ,
Abstract :
A 100 gate optoelectronic sampler is used to measure the output electrical signal provided by an ultrafast detector. The detector electrical pulse lasts from 20 ps to 100 ps (full width at half maximum) and is sampled every 3.5 ps. The total record length is 350 ps. Gate switches are made of thin CdTe films deposited by molecular beam epitaxy at low temperature on a sapphire substrate. Such a layer presents a carrier sweepout time of 1 ps, or less. Gate switches are turned on by a 350 fs laser pulse and the collected charges are stored in capacitors. Four 32-channel scanners are connected to a 4 × 1 video multiplexer to build up a video signal of the 100 gates. The bandwidth of the propagation line, namely 18 GHz, determines the bandwidth of the optoelectronic sampler. With a further realization this bandwidth will be increased to 35 GHz.
