Thermal analysis of the CDF SVX II silicon vertex detector

A simple finite difference technique is used to model conduction and convection in silicon detector components. The solution is found using a simultaneous equation solver which solves in minutes and enables parametric studies to be performed quickly and easily. The modelling technique is compared to output from a finer mesh, solved using ANSYS [11]. The method lends itself to the problem of thermal runaway in silicon detectors, which occurs when internal (temperature dependent) heat generation within the silicon exceeds the heat removal rate by conduction and convection, the effect of which increases with radiation dose. Comparisons between the computer simulation and some physical models are provided, as well as a comparison with analytical techniques. This modelling technique is then applied to the CDF SVX II silicon detector to determine the temperature profile of the silicon during operating conditions.