Author/Authors :
Unno، نويسنده , , Y. and Takahata، نويسنده , , M. and Maeohmichi، نويسنده , , H. and Hinode، نويسنده , , F. and Akagi، نويسنده , , T. and ASO، نويسنده , , T. and Daigo، نويسنده , , James M. and Dewitt، نويسنده , , J. and Dorfan، نويسنده , , D. and Dubbs، نويسنده , , T. and Frautschi، نويسنده , , M. and Grillo، نويسنده , , Elizabeth A. and Haber، نويسنده , , C. and Handa، نويسنده , , T. and Hatakenaka، نويسنده , , John T. and Hubbard، نويسنده , , B. and Iwasaki، نويسنده , , H.، نويسنده ,
Abstract :
A double-sided silicon strip detector with a radiation-tolerant design was fabricated and characterized in a sequence of beam tests at KEK using 4 GeV/c pions. The detectors were combined with newly designed, fast, lower power, bipolar amplifier-shaper-discriminator chips and CMOS digital pipeline chips to record hit-no hit signals in the strips. Efficiencies, noise occupancies, and spatial resolutions were measured before and after the proton irradiation at an equivalent fluence of 1 × 1014 p/cm2, depending on angle of track incidence and strip-pitches. The median pulse height distribution, derived from the threshold scans of the efficiency, allowed to extract the response of the detector. A 1 T magnetic field enabled us to determine the Hall mobilities of electrons and holes.
