Author/Authors :
DʹAuria، نويسنده , , S. and Bates، نويسنده , , R. and Da Vià، نويسنده , , C. and del Papa، نويسنده , , C. and Gowdy، نويسنده , , S. and OʹShea، نويسنده , , V. and Raine، نويسنده , , C. and Smith، نويسنده , , K.، نويسنده ,
Abstract :
We give an overview of recent results in the development of GaAs detectors: they now have 100% charge collection efficiency with good reliability; they are bond-compatible with silicon detectors, with both strip and pixel geometry. New results on pixel detectors are reported as well as a short summary on the radiation hardness of SIU-GaAs detectors.
