Author/Authors :
Fabris، نويسنده , , L. and Goulding، نويسنده , , F.S. and Madden، نويسنده , , N.W. and Manfredi، نويسنده , , P.F.، نويسنده ,
Abstract :
A simple technique to extract the location and value of parasitic series resistance in junction devices is discussed and an instrument which performs these measurements is described. Measurements of gate series resistance on several high figure of merit junction field-effect transistors are presented. The limitations in noise behavior due to this resistance are discussed.
