Radiation hardness of GaAs complementary heterojunction field effect transistors (CHFETs) and CHFET-based monolithic amplifiers

We report measurement results with single GaAs complementary heterojunction field effect transistors (CHFETs) and monolithic CHFET-based operational amplifiers. The devices have been exposed to neutrons (1 MeV peak energy, total fluence of 5 × 1014ncm2) and protons (23 GeV, total fluence of 5 × 1014pcm2). The amplifiers irradiated with 5 × 1014neutronscm2 had already been irradiated either with photons from a 60Co source for a 100 Mrad dose or with 1014neutrons/cm2. All devices remained fully functional after irradiation. We compare their amplification and noise parameters before and after the (additional) exposure.