Author/Authors :
Clergeau، نويسنده , , J.-F. and Contardo، نويسنده , , D. and Haroutunian، نويسنده , , R. and Mirabito، نويسنده , , L. and Smadja، نويسنده , , G.، نويسنده ,
Abstract :
Measurements with variants of micro-gap chambers built on silicon wafers are reported: •
ompare the ability of the detectors to sustain high voltage on the cathodes for two fabrication processes;
x02022;
resent results on the measurement of the second coordinate with small stereo angle cathodes and for two kinds of insulating layer on the silicon;
x02022;
iscuss a first attempt to build a one-dimensional micro-gap chamber with a single metal layer.
