Silicon strip detectors for LHC: Comprehensive process and device analysis

In this paper, the application of technology CAD methodologies to design and optimization of silicon microstrip detectors is described. More specifically, extensive use of both process and device simulation has been made, in order to predict the performance of DC- and AC-coupled detectors being fabricated at CSEM SA, Neuchâtel, Switzerland, in the framework of a CERN R&D collaboration. Such devices, intended to be part of the CMS-project Si-Tracker, have also been extensively tested at INFN laboratories in Perugia, Italy. Satisfactory agreement between measured and simulated data has been found. This validates the proposed approach, which allows for fast and inexpensive characterization of “virtual” devices.