Author/Authors :
Klein، نويسنده , , P. and Cesura، نويسنده , , G. and Fischer، نويسنده , , P. and Lutz، نويسنده , , G. and Neeser، نويسنده , , W. and Richter، نويسنده , , R.H. and Wermes، نويسنده , , N.، نويسنده ,
Abstract :
A new kind of silicon pixel detector with integrated amplification has been built and tested. Each pixel consists of a p-channel JFET located on a fully depleted substrate. The pixel size can be customized by using a drift-chamber-like transport mechanism in each pixel. The homogeneity of the signal response of a small matrix was investigated with a laser diode. The measured rise time and gain of the device are analyzed with a simple small signal model.
