Title of article :
Ultra Low Power 14XM FinFETʹʹs Process-a Radical New Approach to Transistors
Author/Authors :
V.، Suhas K. نويسنده APS College of Engineering ,
Issue Information :
روزنامه با شماره پیاپی 3 سال 2013
Pages :
3
From page :
810
To page :
812
Abstract :
FinFET technology is a radical new technology that has been proposed by the industry to overcome large leakage power occurring in low power VLSI circuits. In this paper, the working of the basic MOSFET, condition of operations for any transistor and the FinFET along with its structure is described. This paper mainly covers how FinFET can be an advantage compared to basic MOSFET and how leakage can be reduced in FinFET is explained with the comparison of basic MOSFET. The fabrication steps are briefly discussed.
Journal title :
International Journal of Electronics Communication and Computer Engineering
Serial Year :
2013
Journal title :
International Journal of Electronics Communication and Computer Engineering
Record number :
2002171
Link To Document :
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