Author/Authors :
Baturitsky، نويسنده , , M.A and Dvornikov، نويسنده , , O.V.، نويسنده ,
Abstract :
This work is devoted to circuit design and fabrication technique permitting to form high-value resistors in BJT-JFET technology. The main resistor characteristics are presented. Simple equations are derived to estimate resistor nonlinearity, which take into consideration different process parameters of top and bottom gates semiconductor layers.
