On the charge multiplication mechanism in silicon radiation detectors

The analysis of experimental data obtained for different silicon detectors irradiated by heavy charged particles with wide mass and energy range was carried out. It is shown that the experimental results are in good agreement with a model based on charge accumulation close to the entrance detector electrode in the course of the charge collection process. The accumulation of a dense cloud of current carriers leads to a temporary creation of a high electric field, which can cause an impact ionization of charge carriers.