Author/Authors :
Biggeri، نويسنده , , U. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M. and Li، نويسنده , , Z. and Verbitskaya، نويسنده , , E.، نويسنده ,
Abstract :
Electrical properties of high (4–6 kΩ cm) and medium (1–1.5 kΩ cm) resistivity p+/n/n+ silicon detectors irradiated with very high fluence neutrons, up to 4×1015 neutrons/cm2, have been studied. Some new results are presented and discussed.
