Correlation between a deep hole trap and the reverse annealing effect in neutron-irradiated silicon detectors
Author/Authors :
Moll، نويسنده , , M and Feick، نويسنده , , H and Fretwurst، نويسنده , , E and Lindstrِm، نويسنده , , G، نويسنده ,
Pages :
4
From page :
194
To page :
197
Abstract :
We report on a correlation between a deep hole trap observed by TSC (Thermally Stimulated Current) and the so-called reverse annealing effect of the effective doping concentration in neutron-irradiated silicon detectors.
