Author/Authors :
Rogalla، نويسنده , , M and Geppert، نويسنده , , R and Gِppert، نويسنده , , R and Hornung، نويسنده , , M and Ludwig، نويسنده , , J and Schmid، نويسنده , , Th and Irsigler، نويسنده , , R and Runge، نويسنده , , Th. and Sِldner-Rembold، نويسنده , , A، نويسنده ,
Abstract :
The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥ 104V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2+) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0 ± 0.6) × 10−14 cm2.
