Author/Authors :
Pallarès، نويسنده , , A and Fontaine، نويسنده , , J.C and Brom، نويسنده , , J.M and Bergdolt، نويسنده , , A.M and Coffin، نويسنده , , J and Eberlé، نويسنده , , H and Sigward، نويسنده , , M.H and Barthe، نويسنده , , S and Schunck، نويسنده , , J.P، نويسنده ,
Abstract :
The aim of this work was to quantify the influence of radiation-induced substrate defects on microstrip gas chamber (MSGC) gain behaviour. The first part of this paper focuses on radiation effects on a typical MSGC substrate: Desag D263 glass. Defect generation was studied for Desag D263 with pure silica (Suprasil 1) as a reference. We studied the evolution of defect concentration with respect to accumulated doses up to 480 kGy. Annealing studies of defects in Desag D263 were also performed. In the second part, the radiation sensitivity of Desag D263 glass has been linked to the behaviour of the detector under irradiation. Comparative gain measurements were taken before and after substrate irradiation at 10 and 80 kGy the minimal dose received during LHC operation and the dose for which defect density is maximum (respectively).
