Title of article
Radiation damage of silicon strip detectors in the NA50 experiment
Author/Authors
Alessandro، نويسنده , , B. and Beolé، نويسنده , , S. and Bonazzola، نويسنده , , G. and Crescio، نويسنده , , E. and Dabrowski، نويسنده , , W. and Giubellino، نويسنده , , P. and Grybos، نويسنده , , P. and Idzik، نويسنده , , M. and Martinetto، نويسنده , , M. and Marzari-Chiesa، نويسنده , , A. and Masera، نويسنده , , M. and Prino، نويسنده , , F. and Ramello، نويسنده , , L. and Mendes، نويسنده , , P.R. and Riccati، نويسنده , , L. and Sitta، نويسنده , , M.، نويسنده ,
Pages
14
From page
556
To page
569
Abstract
During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 1014 eq n/cm2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper.
Keywords
noisy channels , Radiation damage , Silicon strip detectors
Journal title
Astroparticle Physics
Record number
2007499
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