Charge-trap correction and radiation damage in orthogonal-strip planar germanium detectors

A charge-carrier trap correction technique was developed for orthogonal strip planar germanium gamma-ray detectors. The trap corrector significantly improves the gamma-ray energy resolution of detectors with charge-carrier trapping from crystal-growth defects and radiation damage. Two orthogonal-strip planar germanium detectors were radiation damaged with 2-MeV neutron fluences of ~8×109 n/cm2. The radiation-damaged detectors were studied in the 60–80 K temperature range.