Author/Authors :
Chen، نويسنده , , W and Chien، نويسنده , , C.Y and Dezillie، نويسنده , , B and Eremin، نويسنده , , V and Li، نويسنده , , Z and Menichelli، نويسنده , , D and Xie، نويسنده , , X، نويسنده ,
Abstract :
Several n+/n/p+ pixel detectors with medium resistivity (ρ=1.9 kΩ cm) and reduced thickness (200 μm) have been characterized after irradiation up to 5×1014 n/cm2, as an extension of measurements carried out in as-processed devices in the past. Results are really satisfactory: the leakage bulk current is quite low, and no breakdown is observed up to 300 V, which is the design bias in irradiated devices. Moreover, the use of medium resistivity material gives slightly higher radiation tolerance as compared with high resistivity case.
