Author/Authors :
A. Dargys، نويسنده , , A and Kundrotas، نويسنده , , J and ??sna، نويسنده , , A and ?urauskien?، نويسنده , , N، نويسنده ,
Abstract :
Hole de-trapping dynamics out of shallow acceptors subjected to high pulsed electric fields is investigated in pure p-GaAs used in radiation detectors. The characteristic de-trapping times are found from current transients due to impact and tunnel ionization of the acceptors. The de-trapping times are presented as a function of electric field strength.
