Title of article
Electric-field-induced ionization of acceptors in p-GaAs
Author/Authors
A. Dargys، نويسنده , , A and Kundrotas، نويسنده , , J and ??sna، نويسنده , , A and ?urauskien?، نويسنده , , N، نويسنده ,
Pages
4
From page
71
To page
74
Abstract
Hole de-trapping dynamics out of shallow acceptors subjected to high pulsed electric fields is investigated in pure p-GaAs used in radiation detectors. The characteristic de-trapping times are found from current transients due to impact and tunnel ionization of the acceptors. The de-trapping times are presented as a function of electric field strength.
Keywords
Gallium arsenide , Acceptors , Charge de-trapping
Journal title
Astroparticle Physics
Record number
2009954
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