Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers

We report on liquid-phase epitaxial growth of thick layers of GaInP(As), lattice matched to GaAs. Layers with thicknesses up to 10 μm were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a significant decrease in the residual impurity level when erbium is added to the melt. Fundamental electrical and optical properties of the layers were investigated.