Author/Authors :
Bortoletto، نويسنده , , D and Bolla، نويسنده , , G and Guenther، نويسنده , , M and Grim، نويسنده , , G.P. and Lander، نويسنده , , R.L and Willard، نويسنده , , S and Li، نويسنده , , Z، نويسنده ,
Abstract :
Several diodes with different multi-guard ring structures were fabricated from 10 kΩ cm p-type bulk material. Studies on the performance of such devices are presented here. They include the measurement of the leakage current, breakdown voltage and charge collection efficiency before and after 2×1014 p/cm2 irradiation with 63.3 MeV kinetic protons.
