Author/Authors :
Aruntinov، نويسنده , , D. and Barbero، نويسنده , , M. and Gonella، نويسنده , , L. and Hemperek، نويسنده , , T. and Hügging، نويسنده , , F. J. Kruger ، نويسنده , , H. and Wermes، نويسنده , , N. and Breugnon، نويسنده , , P. and Chantepie، نويسنده , , B. and Clemens، نويسنده , , J.C. and Fei، نويسنده , , R. and Fougeron، نويسنده , , D. and Godiot، نويسنده , , S. and Pangaud، نويسنده , , P. and Rozanov، نويسنده , , A. and Garcia-Sciveres، نويسنده , , M. and Mekkaoui، نويسنده , , A.، نويسنده ,
Abstract :
3D technologies are investigated for the upgrade of the ATLAS pixel detector at the HL-LHC. R&D focuses on both, IC design in 3D, as well as on post-processing 3D technologies such as Through Silicon Via (TSV). The first one uses a so-called via first technology, featuring the insertion of small aspect ratio TSV at the pixel level. As discussed in the paper, this technology can still present technical challenges for the industrial partners. The second one consists of etching the TSV via last. This technology is investigated to enable 4-side abuttable module concepts, using todayʹs pixel detector technology. Both approaches are presented in this paper and results from first available prototypes are discussed.
Keywords :
HL-LHC , ATLAS , Pixel detector , 3D electronics , TSV
