Author/Authors :
Pellegrini، نويسنده , , G. and Baselga، نويسنده , , M. and Christophersen، نويسنده , , Isabel M. and Ely، نويسنده , , S. and Fadeyev، نويسنده , , V. and Fleta، نويسنده , , Jerry C. and Gimenez، نويسنده , , A. and Grinstein، نويسنده , , S. and Lopez، نويسنده , , I. and Lozano، نويسنده , , M. and Micelli، نويسنده , , A. and Phlips، نويسنده , , B.F. and Quirion، نويسنده , , D. and Sadrozinski، نويسنده , , P. and Tsiskaridze، نويسنده , , S.، نويسنده ,
Abstract :
This paper reports on the first characterization of double sided 3D silicon radiation pixel detectors with slim edges. These detectors consist of a three-dimensional array of electrodes that penetrate into the detector bulk with the anode and cathode electrodes etched from opposite sides of the substrate. Different detectors were post-processed using the scribe-cleave-passivate (SCP) technology to make “slim edge” sensors. These sensors have only a minimal amount of inactive peripheral region, for the benefit of the construction of large-area tracker and imaging systems.
rget application for this work is the use of 3D slim edge detectors for the ATLAS Forward Physics (AFP) CERN Project, where pixel detectors for position resolution and timing detectors for removal of pile up protons, will be placed as close as possible to the beam to detect diffractive protons at 220 m on either side of the ATLAS interaction point. For this reason the silicon areas should feature the narrowest possible insensitive zone on the sensor edge closest to the beam and withstand high nonuniform irradiation fluences.
Keywords :
ATLAS , 3D detectors , Pixel detectors , Radiation hardness