Author/Authors :
Andricek، نويسنده , , L. and Hauff، نويسنده , , D. and Kemmer، نويسنده , , J. and Lükewille، نويسنده , , P. and Lutz، نويسنده , , G. and Moser، نويسنده , , H.G. and Richter، نويسنده , , R.H. and Rohe، نويسنده , , T. and Stolze، نويسنده , , K. and Viehl، نويسنده , , A.، نويسنده ,
Abstract :
Major challenges in building silicon strip detectors for future high luminosity experiments are the high radiation level and the huge number of sensors required for the construction of the precision layers of the complete tracking system. Single-sided p+n strip detectors for ATLAS SCT designed and fabricated at the MPI Semiconductor Laboratory have been exposed to 3×1014/cm2 24 GeV protons. The major features of the design, including the biasing technique using implanted resistors, are discussed and results are presented. The technology was transferred to CiS, Germany, a company capable of the desired large-scale production. Results of this industrially fabricated sensors look very promising and show the expected radiation hardness.
