Title of article :
Design optimization of radiation-hard, double-sided, double-metal, AC-coupled silicon sensors
Author/Authors :
Ohsugi، نويسنده , , T. and Iwata، نويسنده , , Y. and Ohmoto، نويسنده , , T. and Handa، نويسنده , , T. and Fujita، نويسنده , , K. and Kitabayashi، نويسنده , , H. and Sato، نويسنده , , K. and Satoh، نويسنده , , Shyam S. and Takashima، نويسنده , , James R. and Nakano، نويسنده , , Elsayed I. and Yamamoto، نويسنده , , K. and Yamamura، نويسنده , , K.، نويسنده ,
Abstract :
A double-sided, double metal, AC coupled readout silicon microstrip sensor (DDSMS) has been developed for the SVX-II, the upgrade vertex detector for CDF. Key issue in the development is to achieve sufficient radiation hardness for survival in the radiation environment of several kGy/yr. The required high-voltage capability and the reduction of the readout capacitance of the double-metal side were critical design goals. Detailed design methods to radiation-hard silicon sensors are discussed.
