Author/Authors :
Ota، نويسنده , , N. and Murakami، نويسنده , , T. and Sugizaki، نويسنده , , M. and Kaneda، نويسنده , , M. and Tamura، نويسنده , , T. and Ozawa، نويسنده , , H. and Kamae، نويسنده , , T. and Makishima، نويسنده , , K. and Takahashi، نويسنده , , T. and Tashiro، نويسنده , , M. and Fukazawa، نويسنده , , Y. and Kataoka، نويسنده , , J. and Yamaoka، نويسنده , , K. and Kubo، نويسنده , , S. and Tanihata، نويسنده , , C. and Uchiyama، نويسنده , , Y. and Mat، نويسنده ,
Abstract :
Thick and large area PIN diodes for the hard X-ray astronomy in the 10–60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.
Keywords :
Si PIN diode , Thick , Na contamination , Hard X-ray astronomy
