Author/Authors :
Militaru، نويسنده , , O. and Borrello، نويسنده , , L. and Bozzi، نويسنده , , C. and Rold، نويسنده , , M.Da and DellʹOrso، نويسنده , , R. and Dutta، نويسنده , , S. and Messineo، نويسنده , , A. and Mihul، نويسنده , , A. and Tonelli، نويسنده , , G. and Verdini، نويسنده , , P.G. and Wheadon، نويسنده , , R. and Xie، نويسنده , , Z.، نويسنده ,
Abstract :
The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n+-layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8×1015 cm−2.
