TCAD optimization of charge collection efficiency in silicon microstrip detectors

In this paper, numerical analysis techniques are applied to the study of microstrip silicon detectors exploited in the field of high-energy physics. At high luminosity required by future experiments, radiation hardness of such device becomes a critical issue. The adoption of relatively low-resistivity substrates has been suggested as a key to face such a problem: simulations have been carried out to verify this assumption. Comparisons have been made in terms of depletion voltage, as well as of charge-collection efficiency, by exploiting some of the features of a customized simulation environment. Estimated, long-term radiation hardness of low-resistivity detectors favorably compares with high-resistivity ones.