Title of article
Growth and characterization of indium-doped Cd1−xZnxTe crystal by traveling heater method
Author/Authors
Wei، نويسنده , , Gaoli and Wang، نويسنده , , Linjun and Zhang، نويسنده , , Jijun and Yuan، نويسنده , , Zhenwen and Qin، نويسنده , , Kaifeng and Min، نويسنده , , Jiahua and Liang، نويسنده , , Xiaoyan and Xia، نويسنده , , Yiben، نويسنده ,
Pages
4
From page
127
To page
130
Abstract
An indium-doped detector grade Cd0.9Zn0.1Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×1010 Ω cm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 μm and the concentration was ∼105 cm−3. The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662 keV 137Cs gamma ray radiation at room temperature for the as-grown CZT samples.
Keywords
Nuclear radiation detectors , CdZnTe , THM , Semiconducting II–VI materials
Journal title
Astroparticle Physics
Record number
2012773
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