Author/Authors :
Fischer، نويسنده , , P. and Kemmer، نويسنده , , J. and Klein، نويسنده , , P. and Lِcker، نويسنده , , M. and Lutz، نويسنده , , G. and Neeser، نويسنده , , W. and Strüder، نويسنده , , L. and Wermes، نويسنده , , N.، نويسنده ,
Abstract :
In the DEPFET pixel concept the detected incident radiation is directly sensed and amplified by a JFET integrated in every pixel cell. While the DEPFET detector principle has already been demonstrated previously on single pixel structures, we present here the first successful operation of a large 32×32 DEPFET pixel matrix as an imaging device. The matrix has been exposed to 60 keV gamma rays of a 241 Am source and has been scanned using an IR laser. The principle of operation as well as the charge collection in the structure and possible improvements are discussed.
Keywords :
DEPFET , Pixel detector , autoradiography , Silicon detector , Imaging