Author/Authors :
Klein، نويسنده , , P. and Aurisch، نويسنده , , T. and Buchholz، نويسنده , , P. and Fischer، نويسنده , , P. and Lِcker، نويسنده , , M. and Neeser، نويسنده , , W. and Strüder، نويسنده , , L. and Trimpl، نويسنده , , M. and Ulrici، نويسنده , , J. and Vocht، نويسنده , , J. and Wermes، نويسنده , , N.، نويسنده ,
Abstract :
The DEPFET structure consists of a field effect transistor integrated on high-resistivity silicon, which can be used as a radiation detector. Due to several features (e.g. very low noise at room temperature, information storage capability and a thin, homogeneous entrance window), the DEPFET concept is useful for various applications. In order to apply a DEPFET pixel detector in autoradiography, 64×64 matrices with a pixel size of 50 μm×50 μm were built. Using several ASIC chips for the readout control and signal processing, a complete sensor system allows a row-by-row detector readout with almost continuous sensitivity. First results on the device homogenity, the quantum efficiency and the very promising noise performance are presented.
Keywords :
DEPFETRoom temperature detector , Pixel detector , BioScope , Low-noise silicon detector , autoradiography , nuclear medicine imaging , In vivo studies , Tritium detector
