Author/Authors :
Rachevski، نويسنده , , Alexandre and Zampa، نويسنده , , Gianluigi and Zampa، نويسنده , , Nicola and Rashevskaya، نويسنده , , Irina and Vacchi، نويسنده , , Andrea and Giacomini، نويسنده , , Gabriele and Picciotto، نويسنده , , Antonino and Cicuttin، نويسنده , , Andres and Crespo، نويسنده , , Maria Liz and Tuniz، نويسنده , , Claudio، نويسنده ,
Abstract :
Using a 55Fe source we characterized the spectroscopic performance of a matrix of Silicon Drift Diodes (SDDs). The matrix consists of a completely depleted volume of silicon wafer subdivided into five identical hexagonal cells. The back side is composed of five implanted arrays of increasingly negatively biased concentric p + rings. The front side, common to all five cells, is a uniformly implanted p + entrance window. Ionizing radiation impinging the detector bulk generates electrons that drift towards small readout n + pads placed on the back side at the center of each cell. The total sensitive area of the matrix is 135 mm2, the wafer thickness is 450 μ m . We report on the layout of the experimental set-up, as well as the spectroscopic performance measured at different temperatures and bias conditions.
