Nano-scale potential profiles of silicon particle detectors measured by atomic force microscopy

This is a report of preliminary results of Atomic Force Microscopy and Kelvin Probe Force Microscopy measurements performed on high-resistivity silicon particle detectors. All the measured devices were PIN structures. The measurements were performed on cleaved surfaces of non-irradiated as well as irradiated devices. The results indicate that the electric field under the junction contact is non-uniform at thermal equilibrium. The results also show a drastic variation in Contact Potential Difference after irradiation.