Author/Authors :
S.F. and Katrunov، نويسنده , , K.A. and Starzhinskiy، نويسنده , , N.G. and Malyukin، نويسنده , , Yu.V. and Silin، نويسنده , , V.I. and Zenya، نويسنده , , I.M. and Tamulaitis، نويسنده , , G.، نويسنده ,
Abstract :
Afterglow in two types of semiconductor scintillators, ZnSe(Te) and ZnSe(O,Al), after pulsed X-ray excitation is studied. It is demonstrated that the afterglow can be significantly reduced by annealing in a zinc-rich atmosphere and co-doping by rare-earth elements. The co-doping also decreases the light yield of the ZnSe(Te) crystal, but has a minor influence on the light yield of annealed ZnSe(O,Al). The influence of the co-doping on carrier trapping is discussed.
