Author/Authors :
K. Pozela، نويسنده , , K. and Pozela، نويسنده , , J. and Dapkus، نويسنده , , L. and Jasutis، نويسنده , , V. and Silenas، نويسنده , , A. and Smith، نويسنده , , K.M. and Bendorius، نويسنده , , R.A.، نويسنده ,
Abstract :
It has been observed that only a part of the AlxGa1−xAs graded-gap layer with the energy gap gradient g>20 eV/cm is active as a X-ray luminescence source. The thickness of the active layer is 30–50 μm. To increase the detectors optical response efficiency, the following methods are proposed and tested:
tion of the X-ray luminescence light, generated in the bulk AlxGa1−xAs layer, inside the total reflection angle θ;
l stimulation of the electron–hole radiative recombination.
