Author/Authors :
Casse، نويسنده , , G. and Allport، نويسنده , , P.P. and Booth، نويسنده , , P.S.L. and Greenall، نويسنده , , A. and Jackson، نويسنده , , J.N and Jones، نويسنده , , T.J. and Smith، نويسنده , , N.A. and Turner، نويسنده , , P.R. and Carter، نويسنده , , J.R. and Morgan، نويسنده , , D. and Robinson، نويسنده , , D. and Beck، نويسنده , , G.A. and Carter، نويسنده , , A.A.، نويسنده ,
Abstract :
Large area and miniature microstrip detectors were processed by Micron Semiconductor Ltd on oxygenated silicon and non-oxygenated material. The pre-irradiation and post-irradiation IV and inter-strip capacitance values all agree between the control devices and those with enhanced oxygen. After irradiation, the capacitance-voltage (CV) derived depletion voltage for the oxygenated detector is lower than that for the control device. However, the difference appears less marked than is typically seen with diodes. The charge collection properties were studied with 1064 nm laser and minimum ionising electrons (m.i.p.ʹs) from a 106Ru source, with a good agreement between light-spot and source data. We found evidence for improvement in oxygenated detectors from this run with this supplier but again, not as pronounced as might be expected from the diode studies.
Keywords :
Charge collection efficiency , Oxygenated silicon detectors , Tracking , Radiation hardness
