Author/Authors :
Bilevych، نويسنده , , Y. and Blanco Carballo، نويسنده , , V.M. and Chefdeville، نويسنده , , M. and Colas، نويسنده , , P. and Delagnes، نويسنده , , E. and Fransen، نويسنده , , Alexander M. and van der Graaf، نويسنده , , H. and Koppert، نويسنده , , W.J.C. and Melai، نويسنده , , J. and Salm، نويسنده , , Paulo C. and Schmitz، نويسنده , , J. and Timmermans، نويسنده , , J. and Wyrsch، نويسنده , , N.، نويسنده ,
Abstract :
In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10 μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges.
Keywords :
Radiation detectors , Discharges , Sparks , MPGD , Pixel readout , Silicon nitride , amorphous silicon , Timepix , microsystems , CMOS post-processing , Micromegas , Above IC
