Author/Authors :
Akimoto، نويسنده , , T. and Arai، نويسنده , , S. and Hara، نويسنده , , K. and Nakayama، نويسنده , , T. and Ikegami، نويسنده , , Y. and Iwata، نويسنده , , Y. and Kobayasi، نويسنده , , H. and Kohriki، نويسنده , , T. and Kondo، نويسنده , , T. and Nakano، نويسنده , , I. and Ohsugi، نويسنده , , T. and Shimojima، نويسنده , , M. and Shinma، نويسنده , , Shyam S. and Takashima، نويسنده , , R. and Terada، نويسنده , , S. and Ujiie، نويسنده , , N. and Unno، نويسنده , , Y. ، نويسنده ,
Abstract :
In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment, we have irradiated various types of silicon sensors with 12 GeV protons at KEK. Among the other properties, we made a comparative study of characteristics of the sensors with two wafer planes 〈1 1 1〉 and 〈1 0 0〉. The studied sensors are p-on-n type, which satisfy the ATLAS-SCT specifications. Possible dependence on the substrate orientation could result from different dangling-bond configurations. The compared characteristics are the charge collection efficiency, interstrip capacitance, and noise levels. The noise levels were measured with a real ATLAS-SCT electronics system. A substantial difference is observed in the interstrip capacitance at ∼10 kHz, while the difference is small at >1 MHz. The differences in the charge collection efficiency and in the noise levels appear to be small.
Keywords :
Charge collection , Interstrip capacitance , ATLAS SCT , Radiation damage , Silicon microstrip detector , Wafer direction , 1 , ?1 , 1? , ?100?
