Author/Authors :
Beolè، نويسنده , , S and Bonvicini، نويسنده , , V and Burger، نويسنده , , P and Casse، نويسنده , , G and Giubellino، نويسنده , , P and Idzik، نويسنده , , M and Kolojvari، نويسنده , , A and Rashevsky، نويسنده , , A and Riccati، نويسنده , , L and Vacchi، نويسنده , , A and Zampa، نويسنده , , N، نويسنده ,
Abstract :
The DSI collaboration goal has been the development of large-area silicon drift detectors (SDD) adapted to large-scale production in industry. Such a development is necessary for the use of SDDs in large tracking systems, such as the one proposed for the ALICE experiment at LHC (see Ref. [1]). One of the necessary steps towards large-scale production is the study of the doping uniformity in commercially available Si wafers. We have performed a series of measurements aimed at the evaluation of large-scale fluctuations of doping concentration and of the possible influence on the detector quality induced by processing steps. In this paper, we report final results of both resistivity fluctuations and leakage currents measurements.
