Characterization of neutron irradiated, low-resistivity silicon detectors

A complete electrical characterization of silicon detectors fabricated using low- (≃1.5 kΩ cm) and high- (>5 kΩ cm) resistivity substrates has been carried out. Measurements have been performed before and after neutron irradiation at several different fluences, up to 3×1014 n cm−2 (1 MeV eq.). mental results have been compared with CAD-based simulations. A good agreement has been found, thus validating the CAD model predictions. option of low-resistivity devices appears to have some definite advantages in terms of depletion voltage, which in turn results in better interstrip capacitance and interstrip resistance.