Author/Authors :
Caria، نويسنده , , M and Cadeddu، نويسنده , , S and Lai، نويسنده , , A. and Sesselego، نويسنده , , A and Quarati، نويسنده , , F، نويسنده ,
Abstract :
We present tests on the characterization of a custom-made high sensitive UV silicon detector with 16,512 pixels and 3.8 cm×2.8 cm active area. The structures were characterized for inter-pixel cross talk and dark current stability and responsivity at 260 nm of UV radiation.
Keywords :
Silicon , Back-side illumination , Responsivity , Photodetectors , UV
