Title of article :
Amorphous silicon-based microchannel plates
Author/Authors :
Franco، نويسنده , , Andrea and Riesen، نويسنده , , Yannick and Wyrsch، نويسنده , , Nicolas and Dunand، نويسنده , , Sylvain and Powolny، نويسنده , , François and Jarron، نويسنده , , Pierre and Ballif، نويسنده , , Christophe، نويسنده ,
Pages :
4
From page :
74
To page :
77
Abstract :
Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.
Keywords :
Plasma enhanced chemical vapor deposition (PECVD) , amorphous silicon , Microchannel plates
Journal title :
Astroparticle Physics
Record number :
2020046
Link To Document :
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