Author/Authors :
Odaka، نويسنده , , Hirokazu and Ichinohe، نويسنده , , Yuto and Takeda، نويسنده , , Shinʹichiro and Fukuyama، نويسنده , , Taro and Hagino، نويسنده , , Koichi and Saito، نويسنده , , Shinya and Sato، نويسنده , , Tamotsu and Sato، نويسنده , , Goro and Watanabe، نويسنده , , Shin and Kokubun، نويسنده , , Motohide and Takahashi، نويسنده , , Tadayuki and Yamaguchi، نويسنده , , Mitsutaka and Tanaka، نويسنده , , Takaa، نويسنده ,
Abstract :
We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500 - μ m - thick Si-DSD and four layers of 750 - μ m - thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250 μ m . In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.
