Title of article
Electrical characteristics of silicon pixel detectors
Author/Authors
Gorelov، نويسنده , , I and Gorfine، نويسنده , , G and Hoeferkamp، نويسنده , , M and Mata-Bruni، نويسنده , , Martin and Santistevan، نويسنده , , G and Seidel، نويسنده , , S.C. and Ciocio، نويسنده , , A and Einsweiler، نويسنده , , K and Emes، نويسنده , , J and Gilchriese، نويسنده , , M and Joshi، نويسنده , , A and Kleinfelder، نويسنده , , S and Marchesini، نويسنده , , R and McCormack، نويسنده , , F and Milgrome، نويسنده , , O and Palaio، نويسنده , , N، نويسنده ,
Pages
16
From page
202
To page
217
Abstract
Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
Keywords
Semiconductor , Silicon , Tracking , pixel
Journal title
Astroparticle Physics
Record number
2020316
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