Author/Authors :
Povoli، نويسنده , , M. and Bagolini، نويسنده , , A. and Boscardin، نويسنده , , M. and Dalla Betta، نويسنده , , G.-F. and Giacomini، نويسنده , , G. and Mattedi، نويسنده , , F. and Vianello، نويسنده , , E. and Zorzi، نويسنده , , N.، نويسنده ,
Abstract :
We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.
Keywords :
3D detectors , Silicon detectors , Numerical simulations , TCAD , Electrical characterization , Test structures
