Fabrication process validation for a double-sided silicon pixel detector

Previous results on the performance under irradiation of a pixel detector matrix (Nucl. Instr. and Meth. A 487 (2002) 170) have been extended in order to test the readiness for commercial detector wafer production, using I–V, I–V under low-energy irradiation (UV responsivity) and C–V characterisation methods. The data analysis includes a study of the C–V characteristic interpolation. The conclusion points to the fact that state-of-the-art double-sided silicon pixel detector fabrication allows reliable industrialisation of low-energy imaging devices.